Gerhard Klimeck

2018

Tarek A. Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, Yuling Hsueh, James Charles, Jim Fonseca, Michael Povolotskyi, Jun Oh Kim, Sanjay Krishna, Monica S. Allen, Jeffery W. Allen, Rajib Rahman, and Gerhard Klimeck (2018): Theoretical Study of Strain-Dependent Optical Absorption in a Doped Self-Assembled InAs/InGaAs/GaAs/AlGaAs Quantum Dot, Beilstein Journal of Nanotechnology, Beilstein Institut, Vol 9, pp1075-1084
Kuang-Chung Wang, Yuanchen Chu, Daniel Valencia, Junzhe Geng, James Charles, Prasad Sarangapani, and Tillmann Kubis (2018): Nonequilibrium Green's Function Method: Buttiker Probes for Carrier Generation and Recombination, Institute of Electrical & Electronics Engineers, 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp5-8, Austin, Texas, U.S.A.
H. Sahasrabudhe, B. Novakovic, J. Nakamura, S. Fallahi, M. Povolotskyi, G. Klimeck, R. Rahman, and M. J. Manfra (2018): Optimization of Edge State Velocity in the Integer Quantum Hall Regime, Physical Review B, American Physical Society, Vol 97, Num 8, pp085302
Daniel Valencia, Evan Wilson, Zhengping Jiang, Gustavo A. Valencia-Zapata, Kuang-Chung Wang, Gerhard Klimeck, and Michael Povolotskyi (2018): Grain-Boundary Resistance in Copper Interconnects: From an Atomistic Model to a Neural Network, Physical Review Applied, American Physical Society, Vol 9, Num 4, pp044005
Archana Tankasala, Joseph Salfi, Juanita Bocquel, Benoit Voisin, Muhammad Usman, Gerhard Klimeck, Michelle Y. Simmons, Lloyd C. L. Hollenberg, Sven Rogge, and Rajib Rahman (2018): Two-Electron States of a Group-v Donor in Silicon from Atomistic Full Configuration Interactions, Physical Review B, American Physical Society, Vol 97, Num 19, pp195301
Pengyu Long, Jun Z. Huang, Michael Povolotskyi, Prasad Sarangapani, Gustavo A. Valencia-Zapata, Tillmann Kubis, Mark J. W. Rodwell, and Gerhard Klimeck (2018): Atomistic Modeling Trap-Assisted Tunneling in Hole Tunnel Field Effect Transistors, Journal of Applied Physics, AIP Publishing, Vol 123, Num 17, pp174504
Junzhe Geng, Prasad Sarangapani, Kuang‐Chung Wang, Erik Nelson, Ben Browne, Carl Wordelman, James Charles, Yuanchen Chu, Tillmann Kubis, and Gerhard Klimeck (2018): Quantitative Multi-Scale, Multi-Physics Quantum Transport Modeling of GaN-Based Light Emitting Diodes, Physica Status Solidi A: Applications and Materials Science, John Wiley and Sons, Inc., Vol 215, Num 9, pp1700662
Yuanchen Chu, Prasad Sarangapani, James Charles, Gerhard Klimeck, and Tillmann Kubis (2018): Explicit screening full band quantum transport model for semiconductor nanodevices, Journal of Applied Physics, AIP Publishing LLC, Vol 123, Num 24, pp244501

2017

Junzhe Geng, Prasad Sarangapani, Erik Nelson, Ben Browne, Carl Wordelman, Tillmann Kubis, and Gerhard Klimeck (2017): NEMO5: Realistic and Efficient NEGF Simulations of GaN Light-Emitting Diodes, SPIE, Proceedings, Physics and Simulation of Optoelectronic Devices XXV (SPIE OPTO), Vol 10098, Num 13, San Francisco, California, U.S.A.
Kuang-Chung Wang, Teodor K. Stanev, Daniel Valencia, James Charles, Alex Henning, Vinod K. Sangwan, Aritra Lahiri, Daniel Mejia, Prasad Sarangapani, Michael Povolotskyi, Aryan Afzalian, Jesse Maassen, Gerhard Klimeck, Mark C. Hersam, Lincoln J. Lauhon, Nathaniel P. Stern, and Tillmann Kubis (2017): Control of interlayer physics in 2H transition metal dichalcogenides, Journal of Applied Physics, AIP Publishing LLC, Vol 122, Num 22, pp224302

2016

Hesameddin Ilatikhameneh, Tarek A. Ameen, Gerhard Klimeck, and Rajib Rahman (2016): Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots, IEEE Journal of Quantum Electronics, Institute of Electrical and Electronics Engineers, Vol 52, Num 7, pp1-8
Pengyu Long, Evan Wilson, Jun Z. Huang, Gerhard Klimeck, Mark J. W. Rodwell, and Michael Povolotskyi (2016): Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs, IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, Vol 37, Num 1, pp107-110
Yu He, Yaohua Tan, Zhengping Jiang, Michael Povolotskyi, Gerhard Klimeck, and Tillmann Kubis (2016): Surface Passivation in Empirical Tight Binding, IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, Vol 63, Num 3, pp954-958
K. Miao, S. Sadasivam, J. Charles, G. Klimeck, T. S. Fisher, and T. Kubis (2016): Büttiker Probes for Dissipative Phonon Quantum Transport in Semiconductor Nanostructures, Applied Physics Letters, AIP Publishing, Vol 108, Num 11, pp113107
Pengyu Long, Jun Z. Huang, Michael Povolotskyi, Gerhard Klimeck, and Mark J. W. Rodwell (2016): High-Current Tunneling FETs With (1(1)over-bar0) Orientation and a Channel Heterojunction, IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, Vol 37, Num 3, pp345-348
Yaohua Tan, Michael Povolotskyi, Tillmann Kubis, Timothy B. Boykin, and Gerhard Klimeck (2016): Transferable Tight-Binding Model for Strained Group IV and III-v Materials and Heterostructures, Physical Review B, American Physical Society, Vol 94, Num 4, pp045311
Tillmann Kubis, Yu He, Robert Andrawis, and Gerhard Klimeck (2016): General Retarded Contact Self-energies in and beyond the Non-equilibrium Green's Functions Method, IOP Publishing Ltd, Journal of Physics: Conference Series (Progress in Non-equilibrium Green's Functions, PNGF VI), Vol 696, Num 1, pp012019, Lund, Sweden
James Charles, Prasad Sarangapani, Roksana Golizadeh-Mojarad, Robert Andrawis, Daniel Lemus, Xinchen Guo, Daniel Mejia, James E. Fonseca, Michael Povolotskyi, Tillmann Kubis, and Gerhard Klimeck (2016): Incoherent Transport in NEMO5: Realistic and Efficient Scattering on Phonons, Journal of Computational Electronics, Springer Nature, Vol 15, Num 4, pp1123-1129
Yu Wang, Archana Tankasala, Lloyd C L Hollenberg, Gerhard Klimeck, Michelle Y Simmons, and Rajib Rahman (2016): Highly Tunable Exchange in Donor Qubits in Silicon, npj Quantum Information, Nature Publishing Group, Vol 2, pp16008

2015

Fan W. Chen, Luis A. Jauregui, Yaohua Tan, Michael Manfra, Gerhard Klimeck, Yong P. Chen, and Tillmann Kubis (2015): In-Surface Confinement of Topological Insulator Nanowire Surface States, Applied Physics Letters, AIP Publishing, Vol 107, Num 12, pp121605
Mehdi Salmani-Jelodar, Saumitra R. Mehrotra, Hesameddin Ilatikhameneh, and Gerhard Klimeck (2015): Design Guidelines for Sub-12 Nm Nanowire MOSFETs, IEEE Transactions on Nanotechnology, Institute of Electrical & Electronics Engineers, Vol 14, Num 2, pp210-213
Yaohua P. Tan, Michael Povolotskyi, Tillmann Kubis, Timothy B. Boykin, and Gerhard Klimeck (2015): Tight-Binding Analysis of Si and GaAs Ultrathin Bodies with Subatomic Wave-Function Resolution, Physical Review B, American Physical Society, Vol 92, Num 8, pp085301
Bozidar Novakovic and Gerhard Klimeck (2015): Atomistic Quantum Transport Approach to Time-Resolved Device Simulations, Institute of Electrical & Electronics Engineers, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp8-11, Washington, D.C., U.S.A.
Parijat Sengupta, Tillmann Kubis, Yaohua Tan, and Gerhard Klimeck (2015): Proximity Induced Ferromagnetism, Superconductivity, and Finite-Size Effects on the Surface States of Topological Insulator Nanostructures, Journal of Applied Physics, AIP Publishing, Vol 117, Num 4, pp044304
Ravi Pramod Vedula, Saumitra Mehrotra, Tillmann Kubis, Michael Povolotskyi, Gerhard Klimeck, and Alejandro Strachan (2015): Optimal Ge/SiGe Nanofin Geometries for Hole Mobility Enhancement: Technology Limit from Atomic Simulations, Journal of Applied Physics, AIP Publishing, Vol 117, Num 17, pp174312

2014

M. Salmani-Jelodar, S. Kim, K. Ng, and G. Klimeck (2014): Transistor Roadmap Projection Using Predictive Full-Band Atomistic Modeling, Applied Physics Letters, AIP Publishing, Vol 105, Num 8, pp083508
Yu He, Yu Wang, Gerhard Klimeck, and Tillmann Kubis (2014): Non-Equilibrium Green's Functions Method: Non-Trivial and Disordered Leads, Applied Physics Letters, AIP Publishing, Vol 105, Num 21, pp213502
Ganesh Hegde, Michael Povolotskyi, Tillmann Kubis, Timothy Boykin, and Gerhard Klimeck (2014): An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation, Journal of Applied Physics, AIP Publishing, Vol 115, Num 12, pp123703
Pengyu Long, Michael Povolotskyi, Bozidar Novakovic, Tillmann Kubis, Gerhard Klimeck, and Mark J. W. Rodwell (2014): Design and Simulation of Two-Dimensional Superlattice Steep Transistors, IEEE Electron Device Letters, Institute of Electrical & Electronics Engineers, Vol 35, Num 12, pp1212-1214

2013

J. E. Fonseca, T. Kubis, M. Povolotskyi, B. Novakovic, A. Ajoy, G. Hegde, H. Ilatikhameneh, Z. Jiang, P. Sengupta, Y. Tan, and G. Klimeck (2013): Efficient and Realistic Device Modeling from Atomic Detail to the Nanoscale, Journal of Computational Electronics, Springer Science + Business Media, Vol 12, Num 4, pp592-600
Lang Zeng, Yu He, Michael Povolotskyi, XiaoYan Liu, Gerhard Klimeck, and Tillmann Kubis (2013): Low Rank Approximation Method for Efficient Green's Function Calculation of Dissipative Quantum Transport, Journal of Applied Physics, AIP Publishing, Vol 113, Num 21, pp213707
Parijat Sengupta, Tillmann Kubis, Yaohua Tan, Michael Povolotskyi, and Gerhard Klimeck (2013): Design Principles for HgTe Based Topological Insulator Devices, Journal of Applied Physics, AIP Publishing, Vol 114, Num 4, pp043702
Yaohua Tan, Michael Povolotskyi, Tillmann Kubis, Yu He, Zhengping Jiang, Gerhard Klimeck, and Timothy B. Boykin (2013): Empirical Tight Binding Parameters for GaAs and MgO with Explicit Basis Through DFT Mapping, Journal of Computational Electronics, Springer Science + Business Media, Vol 12, Num 1, pp56-60

2018

Gerhard Klimeck, Tillmann Kubis, James Charles, Fan Chen, Jim Fonseca, Junzhe Geng, Xinchen Guo, Hesameddin Ilatikhameneh, Daniel Mejia, Bozidar Novakovic, Michael Povolotskyi, Rajib Rahman, Prasad Sarangapani, Archana Tankasala, Yu Wang (2018): Leading Future Electronics into the Nano Regime using Quantum Atomistic Simulations in NEMO5, 2018 Blue Waters Annual Report, pp144-147

2017

Gerhard Klimeck (2017): Leading Future Electronics into The Nano Regime Using Quantum Atomistic Simulations in NEMO5, 2017 Blue Waters Annual Report, pp144-145

2016

Gerhard Klimeck (2016): Nanoscale Electronic Devices with NEMO5, 2016 Blue Waters Annual Report, pp124-126

2015

Gerhard Klimeck (2015): Atomistic Modeling of Future Nanoscale Electronic Devices with NEMO5, 2015 Blue Waters Annual Report, pp92-93

Kuang-Chung Wang, Y. Chu, and T. Kubis: Self-energies: enabling multiphysics and multiscaling in optoelectronic quantum transport modeling


18th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2018); Hong Kong, China, Nov 6, 2018

James Charles: Non-Local Scattering with a New Recursive Nonequilibrium Green’s Function Method


International Workshop on Computational Nanotechnology; Windermere, England, U.K., Jun 7, 2017

Xinchen Guo: Nanoelectronic Modeling on Blue Waters with NEMO5


Blue Waters Symposium 2017, May 17, 2017

Jim Fonseca: Nanoelectronics Modeling on Blue Waters with NEMO5


Blue Waters Symposium 2016, Jun 14, 2016

Fan Chen, M. J. Manfra, G. Klimeck, and T. C. Kubis: NEMO5: Why must we treat topological insulator nanowires atomically?


International Workshop on Computational Electronics (IWCE 2015); West Lafayette, Indiana, U.S.A., Sep 2, 2015
Archana Tankasala, Y. Wang, J. Bocquel, B. Voison, M. Usman, S. Rogge, M. Simmons, L. Hollenberg, R. Rahman, and G. Klimeck: Modeling Exchange Interaction in Bulk and Sub-Surface Donor Pairs In Silicon for Two-Qubit Gates
Army Research Office Quantum Computing Program Review 2015; San Diego, California, U.S.A., Aug 10, 2015

Jim Fonseca: Accelerating Nano-scale Transistor Innovation


Blue Waters Symposium 2014, May 14, 2014
Mehdi Salmani-Jelodar, J. D. Bermeol, S. Kim, and G. Klimeck: ITRS Tool on NanoHUB
2014 NanoHUB User Conference; Phoenix, Arizona, U.S.A., Apr 10, 2014

From massive supercomputers come tiniest transistors


Mar 3, 2015

A relentless global effort to shrink transistors has made computers continually faster, cheaper and smaller over the last 40 years. This effort has enabled chipmakers to double the number of transistors on a chip roughly every 18 months--a trend referred to as Moore's Law. In the process, the U.S. semiconductor industry has become one of the nation's largest export industries, valued at more than $65 billion a year. ... At this nanoscale, new phenomena take precedence over those that hold sway in the macro-world. Quantum effects such as tunneling and atomistic disorder dominate the characteristics of these nanoscale devices. Fundamental questions about how various materials and configurations behave at this scale need to be answered. "Further improvements in these dimensions will come only through detailed and optimized device design and better integration," said Gerhard Klimeck, a professor of electrical and computer engineering at Purdue University and director of the Network for Computational Nanotechnology there.


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Nano is now


Oct 16, 2013

Soon our devices will depend on transistors that are a few atoms wide. A tool developed by the Nanoelectronic Modeling Group will help design them. If you think nano-devices are the stuff of science fiction or the distant future, think again. “If you have an iPhone or other smartphone, you already have nanotechnology in your pocket,” says Gerhard Klimeck, director of the Network for Computational Nanotechnology and professor of electrical and computer engineering at Purdue University.


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